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HL6323MG
AlGaInP Laser Diodes
Description
The HL6323MG is a 0.63 m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The HL6323MG is packaged in the small can (5.6 mm), enabling end products to be kept small. ODE-208-029 (Z) Rev.0 Jul. 01, 2005
Features
* * * * * High output power : 35 mW (CW) Visible light output : p = 639 nm Typ Small package : 5.6 mm TM mode oscillation Single longitudinal mode
Pakage Type * HL6323MG: MG
Internal Circuit
1 3
PD
LD
2
Absolute Maximum Ratings
(TC = 25C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Ratings 1 35 * 50 * 2
2
Unit mW mW V V C C
30 -10 to +50
Storage temperature Tstg -40 to +85 Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime. 2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Optical and Electrical Characteristics
(TC = 25C)
Item Threshold current Slope efficiency Operating current Operating voltage Beam divergence parallel to the junction Beam divergence perpendicular to the junction Lasing wavelength Monitor current Symbol Ith s IOP VOP // p IS Min 30 0.4 7 26 635 0.05 Typ 45 0.6 95 2.3 8.5 30 639 0.15 Max 65 0.9 130 2.8 11 34 642 0.25 Unit mA mW/mA mA V nm mA Test Condition -- 18(mW) / (I(24mW) - I(6mW)) PO = 30 mW PO = 30 mW PO = 30 mW PO = 30 mW PO = 30 mW PO = 30 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4
HL6323MG
Typical Characteristic Curves
Opticai Output Power vs. Forward Current 50
Optical output power, PO (mW) Threshold current, Ith (mA)
Threshold Current vs. Case Temperature 100
40 30 TC = 0C
TC = 25C
20 TC = 50C 10 0
0
40 120 160 80 Forward current, IF (mA)
200
10
0
10 40 20 30 Case temperature, TC (C)
50
Slope Efficiency vs. Case Temperature 1.0
Slope efficiency, s (mW/mA)
Monitor Current vs. Case Temperature 0.25 PO = 30mW VR(PD) = 5V
Monitor current, IS (mA)
0.8
0.20
0.6
0.15 0.10
0.4
0.2
0.05 0
0
0
40 10 30 20 Case temperature, TC (C)
50
0
30 40 20 10 Case temperature, TC (C)
50
Lasing wavelength, p (nm)
Lasing Wavelength vs. Case Temperature 646 PO = 30mW 644
Relative intensity
Far Field Pattern 1.0 PO = 30mW 0.8 TC = 25C 0.6 0.4 0.2 Parallel 30 40 Perpendicular
642 640 638 636 634 632 630 0 20 30 40 10 Case temperature, TC (C) 50
0 -40 -30 -20 -10 0 10 20 Angle, ( )
Rev.0 Jul. 01, 2005 page 2 of 4
HL6323MG
Package Dimensions
As of July, 2002
Unit: mm
0.4 +0.1 -0
5.6 +0 -0.025 1.0 0.1 (0.4)
1.6 0.2
2.3 0.2
0.25
Glass
4.1 0.3 3.55 0.1
1.2 0.1
6.5 1.0
3 - 0.45 0.1 1 2 3
1 2
3 2.0 0.2
OPJ Code JEDEC JEITA Mass (reference value)
1.27
(90)
Emitting Point
LD/MG -- -- 0.3 g
Rev.0 Jul. 01, 2005 page 3 of 4
HL6323MG
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.0 Jul. 01, 2005 page 4 of 4

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